MBE fabrication of III-N-based laser diodes and its development to industrial system
Identifieur interne : 000936 ( Main/Repository ); précédent : 000935; suivant : 000937MBE fabrication of III-N-based laser diodes and its development to industrial system
Auteurs : RBID : Pascal:13-0288286Descripteurs français
- Pascal (Inist)
- Epitaxie jet moléculaire, Diode laser, Laser semiconducteur, Mécanisme croissance, Traitement par plasma, Onde entretenue, Dislocation filetée, Densité dislocation, Durée vie, Puissance sortie, Semiconducteur III-V, Composé III-V, Guide onde, Méthode fondant, Nitrure de gallium, Nitrure d'indium, Laser puits quantique, Substrat GaN, AlGaN, InGaN, 8115H, 8110A, 6172L, 8110F.
English descriptors
- KwdEn :
- Continuous wave, Dislocation density, Flux growth, Gallium nitride, Growth mechanism, III-V compound, III-V semiconductors, Indium nitride, Laser diodes, Lifetime, Molecular beam epitaxy, Output power, Plasma assisted processing, Quantum well lasers, Semiconductor lasers, Threading dislocation, Waveguides.
Abstract
We present recent progress in the growth of nitride based laser diodes (LDs) made by Plasma Assisted Molecular Beam Epitaxy (PAMBE). In this work we demonstrate continuous wave (cw) LDs grown by PAMBE operating in the range 430-460 nm. The LDs were grown on c-plane bulk GaN substrates with threading dislocation densities (TDDs) ranging from 103 cm-2 to 107 cm-2. The low TDDs allowed fabrication of cw LDs with the lifetime exceeding 2000 h at 10 mW of optical output power. The maximum output power for these LDs was 80 mW. We used AlGaN cladding-free design of LDs with InGaN waveguides. The key element to achieve lasing for wavelengths above 450 nm was substantial increase of the nitrogen flux available for growth in PAMBE. The increase of N flux is beneficial for growth of efficient InGaN QWs, which allowed demonstration of optically pumped lasing from single quantum well InGaN laser structures at 501 nm.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 000822
Links to Exploration step
Pascal:13-0288286Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">MBE fabrication of III-N-based laser diodes and its development to industrial system</title><author><name sortKey="Skierbiszewski, C" uniqKey="Skierbiszewski C">C. Skierbiszewski</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37</s1><s2>01-142 Warsaw</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>01-142 Warsaw</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>TopGaN Ltd., Sokolowska 29/37</s1><s2>01-142 Warsaw</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>01-142 Warsaw</wicri:noRegion></affiliation></author><author><name sortKey="Siekacz, M" uniqKey="Siekacz M">M. Siekacz</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37</s1><s2>01-142 Warsaw</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>01-142 Warsaw</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>TopGaN Ltd., Sokolowska 29/37</s1><s2>01-142 Warsaw</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>01-142 Warsaw</wicri:noRegion></affiliation></author><author><name sortKey="Turski, H" uniqKey="Turski H">H. Turski</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37</s1><s2>01-142 Warsaw</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>01-142 Warsaw</wicri:noRegion></affiliation></author><author><name sortKey="Muziol, G" uniqKey="Muziol G">G. Muziol</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37</s1><s2>01-142 Warsaw</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>01-142 Warsaw</wicri:noRegion></affiliation></author><author><name sortKey="Sawicka, M" uniqKey="Sawicka M">M. Sawicka</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37</s1><s2>01-142 Warsaw</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>01-142 Warsaw</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>TopGaN Ltd., Sokolowska 29/37</s1><s2>01-142 Warsaw</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>01-142 Warsaw</wicri:noRegion></affiliation></author><author><name sortKey="Perlin, P" uniqKey="Perlin P">P. Perlin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37</s1><s2>01-142 Warsaw</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>01-142 Warsaw</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>TopGaN Ltd., Sokolowska 29/37</s1><s2>01-142 Warsaw</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>01-142 Warsaw</wicri:noRegion></affiliation></author><author><name sortKey="Wasilewski, Z R" uniqKey="Wasilewski Z">Z. R. Wasilewski</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue Wert</s1><s2>Waterloo, Ontario N2L3C1</s2><s3>CAN</s3><sZ>7 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Waterloo, Ontario N2L3C1</wicri:noRegion></affiliation></author><author><name sortKey="Porowski, S" uniqKey="Porowski S">S. Porowski</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37</s1><s2>01-142 Warsaw</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>01-142 Warsaw</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0288286</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0288286 INIST</idno><idno type="RBID">Pascal:13-0288286</idno><idno type="wicri:Area/Main/Corpus">000822</idno><idno type="wicri:Area/Main/Repository">000936</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Continuous wave</term><term>Dislocation density</term><term>Flux growth</term><term>Gallium nitride</term><term>Growth mechanism</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium nitride</term><term>Laser diodes</term><term>Lifetime</term><term>Molecular beam epitaxy</term><term>Output power</term><term>Plasma assisted processing</term><term>Quantum well lasers</term><term>Semiconductor lasers</term><term>Threading dislocation</term><term>Waveguides</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Epitaxie jet moléculaire</term><term>Diode laser</term><term>Laser semiconducteur</term><term>Mécanisme croissance</term><term>Traitement par plasma</term><term>Onde entretenue</term><term>Dislocation filetée</term><term>Densité dislocation</term><term>Durée vie</term><term>Puissance sortie</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Guide onde</term><term>Méthode fondant</term><term>Nitrure de gallium</term><term>Nitrure d'indium</term><term>Laser puits quantique</term><term>Substrat GaN</term><term>AlGaN</term><term>InGaN</term><term>8115H</term><term>8110A</term><term>6172L</term><term>8110F</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We present recent progress in the growth of nitride based laser diodes (LDs) made by Plasma Assisted Molecular Beam Epitaxy (PAMBE). In this work we demonstrate continuous wave (cw) LDs grown by PAMBE operating in the range 430-460 nm. The LDs were grown on c-plane bulk GaN substrates with threading dislocation densities (TDDs) ranging from 10<sup>3</sup> cm<sup>-2</sup> to 10<sup>7</sup> cm<sup>-2</sup>. The low TDDs allowed fabrication of cw LDs with the lifetime exceeding 2000 h at 10 mW of optical output power. The maximum output power for these LDs was 80 mW. We used AlGaN cladding-free design of LDs with InGaN waveguides. The key element to achieve lasing for wavelengths above 450 nm was substantial increase of the nitrogen flux available for growth in PAMBE. The increase of N flux is beneficial for growth of efficient InGaN QWs, which allowed demonstration of optically pumped lasing from single quantum well InGaN laser structures at 501 nm.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>378</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>MBE fabrication of III-N-based laser diodes and its development to industrial system</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>The 17th International Conference on Molecular Beam Epitaxy</s1></fA09><fA11 i1="01" i2="1"><s1>SKIERBISZEWSKI (C.)</s1></fA11><fA11 i1="02" i2="1"><s1>SIEKACZ (M.)</s1></fA11><fA11 i1="03" i2="1"><s1>TURSKI (H.)</s1></fA11><fA11 i1="04" i2="1"><s1>MUZIOL (G.)</s1></fA11><fA11 i1="05" i2="1"><s1>SAWICKA (M.)</s1></fA11><fA11 i1="06" i2="1"><s1>PERLIN (P.)</s1></fA11><fA11 i1="07" i2="1"><s1>WASILEWSKI (Z. R.)</s1></fA11><fA11 i1="08" i2="1"><s1>POROWSKI (S.)</s1></fA11><fA12 i1="01" i2="1"><s1>AKIMOTO (Katzuhiro)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>SUEMASU (Takashi)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>OKUMURA (Hajime)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37</s1><s2>01-142 Warsaw</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="02"><s1>TopGaN Ltd., Sokolowska 29/37</s1><s2>01-142 Warsaw</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue Wert</s1><s2>Waterloo, Ontario N2L3C1</s2><s3>CAN</s3><sZ>7 aut.</sZ></fA14><fA15 i1="01"><s1>University of Tsukuba</s1><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA15><fA20><s1>278-282</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000506550350700</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>21 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0288286</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We present recent progress in the growth of nitride based laser diodes (LDs) made by Plasma Assisted Molecular Beam Epitaxy (PAMBE). In this work we demonstrate continuous wave (cw) LDs grown by PAMBE operating in the range 430-460 nm. The LDs were grown on c-plane bulk GaN substrates with threading dislocation densities (TDDs) ranging from 10<sup>3</sup> cm<sup>-2</sup> to 10<sup>7</sup> cm<sup>-2</sup>. The low TDDs allowed fabrication of cw LDs with the lifetime exceeding 2000 h at 10 mW of optical output power. The maximum output power for these LDs was 80 mW. We used AlGaN cladding-free design of LDs with InGaN waveguides. The key element to achieve lasing for wavelengths above 450 nm was substantial increase of the nitrogen flux available for growth in PAMBE. The increase of N flux is beneficial for growth of efficient InGaN QWs, which allowed demonstration of optically pumped lasing from single quantum well InGaN laser structures at 501 nm.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15H</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A10A</s0></fC02><fC02 i1="03" i2="3"><s0>001B60A72L</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A10F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Diode laser</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Laser diodes</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Laser semiconducteur</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Semiconductor lasers</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Traitement par plasma</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Plasma assisted processing</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Onde entretenue</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Continuous wave</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Onda continua</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Dislocation filetée</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Threading dislocation</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Dislocación aterrajada</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Densité dislocation</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Dislocation density</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Durée vie</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Lifetime</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Puissance sortie</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Output power</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Potencia salida</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Composé III-V</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>III-V compound</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Guide onde</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Waveguides</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Méthode fondant</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Flux growth</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Método fundente</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Nitrure de gallium</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Gallium nitride</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Galio nitruro</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Nitrure d'indium</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Indium nitride</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Indio nitruro</s0><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Laser puits quantique</s0><s5>29</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Quantum well lasers</s0><s5>29</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Substrat GaN</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>AlGaN</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>InGaN</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>8115H</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>8110A</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>6172L</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>8110F</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>273</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>MBE2012 International Conference on Molecular Beam Epitaxy</s1><s2>17</s2><s3>Nara JPN</s3><s4>2012-09-23</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000936 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 000936 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:13-0288286
|texte= MBE fabrication of III-N-based laser diodes and its development to industrial system
}}
| This area was generated with Dilib version V0.5.77. |  |